Inverse-Designed High-Q/V Silicon Nitride Photonic Crystal Cavities for Second- and Third-Harmonic Generation

Abstract

SiN photonic crystal (PhC) cavities are promising platforms for nonlinear and quantum photonics because of their wide transparency window, CMOS compatibility, and negligible two-photon absorption. However, realizing high-Q/V cavities remains challenging because of the relatively low refractive index of SiN. Here, we employ inverse design to optimize a two-dimensional SiN PhC cavity and experimentally demonstrate a quality factor of approximately 80,000, the highest reported for a near-stoichiometric SiN 2D PhC cavity. Furthermore, both second- and third-harmonic generation are observed from the same cavity, providing experimental evidence of strong optical confinement and large Q/V. Our results establish inverse-designed SiN PhC cavities as a promising platform for nonlinear photonics and future heterogeneous integrated photonic devices.