The "Moir\'e Capacitor Effect" and Stabilization of Fractional Chern Insulators in Rhombohedral Graphene Superlattices

Abstract

While the necessity of a moir\'e potential for fractional Chern insulators (FCIs) in rhombohedral graphene-hBN superlattices, first predicted in Ref. 1, is now grounded in experiments, a theory of its origin and importance remains at large. We present a mechanism---the moir\'e capacitor effect---that enhances the moir\'e potential by electrostatically imprinting the valence charge density onto the conduction bands. We derive the analytical form of this term and reveal its crucial role in stabilizing a parent state with Chern number $C=1$ at filling $\nu=1$. We propose a parent state theory which posits that stability of the Chern insulator and flatness of its hole excitations are necessary for obtaining FCIs upon doping. We then perform multi-band exact diagonalization calculations to confirm the emergence of FCIs at $\nu = 2/3$ in the presence of the moir\'e capacitor effect. Our FCI state is stabilized by inter-band fluctuations, unlike in the moire-free case which collapses with band-mixing. We provide the first consistent theory for this state in aligned samples and explain its absence in unaligned ones.