Time-resolved study of carbonization and growth of ultrathin 3C-SiC on Si(111) under ultra-high vacuum

Abstract

The early-stage formation of silicon carbide (SiC) on Si(111) by ethylene exposure under ultra-high vacuum (UHV) was investigated to resolve the time-dependent chemical and morphological evolution of an ultrathin layer. Clean Si(111) substrates were exposed to C$_2$H$_4$ at 800 {\deg}C for 2 min to 4 h, and the surfaces followed by in-situ X-ray photoelectron spectroscopy (XPS) and ex-situ AFM, SEM, AES, SIMS and TEM. Si 2p and C 1s peak analysis shows the progressive conversion of elemental silicon into a carbidic Si-C phase, the SiC fraction overtaking the elemental component between 120 and 160 min and saturating near 80-81% beyond 180 min, leaving about 19-20% residual elemental silicon. Correlative SEM and AFM reveal a parallel morphological progression, from sparse isolated islands to a coalesced, near-continuous layer. AES depth profiling confirms carbon incorporated into the near-surface region rather than weakly adsorbed as contamination, assigning the islands to early SiC nuclei. TEM confirms the zinc-blende lattice and the presence of cubic silicon carbide (3C-SiC). Together, these results provide a time-resolved picture of SiC nucleation, coalescence and layer growth on Si(111), relevant to 3C-SiC heteroepitaxy, and can be utilized in the optimization of SiC/Si(111) templates for growth of III-nitride and other carbide systems on silicon (e.g. Mo$_2$C).