Samsung Electronics confirms HBM5 will use 2nm GAA process, speed over 50% faster than HBM4E

English summary

[Samsung Electronics confirms HBM5 will use 2nm GAA process, speed over 50% faster than HBM4E] July 27 - Samsung Electronics released an interview with Koo Ja-hyun, head of the Semiconductor Business Technology Development Office, on the 27th. Koo said the next-generation HBM5 memory is expected to run over 50% faster than HBM4E, and "the HBM5 base die will use a 2nm process with GAA structure and achieve higher integration of TSV." Koo said Samsung Electronics will leverage experience and technical competitiveness gained from the 4nm HBM4 base die to introduce the 2nm process in HBM5 ahead of schedule, expand customer collaboration in mobile, HBM, AI, HPC, automotive electronics, robotics, and other fields, and lead the further development and growth of the semiconductor ecosystem.